SUB TEN MICRON CHANNEL DEVICES ACHIEVED BY VERTICAL ORGANIC THIN FILM TRANSISTOR

SUB TEN MICRON CHANNEL DEVICES ACHIEVED  BY VERTICAL ORGANIC THIN FILM TRANSISTOR

Abdul Rauf Khan1, S.S.K. Iyer2

1EC Department, Graphic Era University, Dehradun, Uttarakhand, INDIA,

2EE Department, IIT Kanpur, Kanpur, Uttar Pradesh, INDIA 

ABSTRACT

The channel lengths of the top contact organic thin film transistors are usually defined during their fabrication by optical lithography or by shadow masking during the metal deposition process. Realizing short channel (sub-ten micron channel length) transistors by lithography will require costly lithography equipment. On the other hand, it is extremely challenging to achieve short channel transistors using the low cost shadow mask process. One low cost method of achieving short channel devices is to build vertical transistors with the transistor, where the channel gets defined in the vertical part of the device. This paper shows that vertical channel top contact organic thin film  transistor has been successfullyrealized on the vertical edge of trench. This helped in creating the device with channel lengths less than ten microns, much smaller than what could be typically achieved with the use of shadow masks.

KEYWORDS

Organic Thin Film Transistors OTFT, Radio Frequency Identification RFID, Poly-thiophene PT, Thin film transistor TFT. 

Original Source Link : http://aircconline.com/vlsics/V2N3/2311vlsics07.pdf

http://airccse.org/journal/vlsi/vol2.html