CELL STABILITY ANALYSIS OF CONVENTIONAL 6T DYNAMIC 8T SRAM CELL IN 45NM TECHNOLOGY
K. Dhanumjaya1 , M. Sudha2 , Dr.MN.Giri Prasad3 , Dr.K.Padmaraju4
1Research Scholar, Jawaharlal Nehru Technological University, Anantapur, AP, INDIA
2PG Student, Jawaharlal Nehru Technological University, Anantapur, AP, INDIA
3Professor, Jawaharlal Nehru Technological University, Anantapur, AP, INDIA
4Professor, Jawaharlal Nehru Technological University, Kakinada, AP, INDIA
ABSTRACT:-
A SRAM cell must meet requirements for operation in submicron/nano ranges. The scaling of CMOS technology has significant impact on SRAM cell -- random fluctuation of electrical characteristics and substantial leakage current. In this paper we present dynamic column based power supply 8T SRAM cell and comparing the proposed SRAM cell with respect to conventional SRAM 6T in various aspects. To verify read stability and write ability analysis we use N-curve metric. Simulation results affirmed that proposed 8T SRAM cell achieved improved read stability, read current, and leakage current in 45nm Technology comparing with conventional 6T SRAM using cadence virtuoso tool.
Key Words:-
SRAM, Leakage Current, N-curve, Read stability, Write-ability, Cadence, Virtuoso, 45nm Technology
Original source Link : http://aircconline.com/vlsics/V3N2/3212vlsics04.pdf
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