Wednesday 4 July 2018

POWER AWARE PHYSICAL MODEL FOR 3D IC’S

POWER AWARE PHYSICAL MODEL FOR 3D IC’S
Yasmeen Hasan
Dept Of ECE, Integral University, Lucknow,India 

Abstract:

 In this work we have proposed a geometric model that is employed to devise a scheme for identifying the hotspots and zones in a chip. These spots or zone need to be guarded thermally to ensure performance and reliability of the chip. The model namely continuous unit sphere model has been presented taking into account that the 3D region of the chip is uniform, thereby reflecting on the possible locations of heat sources and the target observation points. The experimental results for the – continuous domain establish that a region which does not contain any heat sources may become hotter than the regions containing the thermal sources. Thus a hotspot may appear away from the active sources, and placing heat sinks on the active thermal sources alone may not suffice to tackle thermal imbalance. Power management techniques aid in obtaining a uniform power profile throughout the chip, but we propose an algorithm using minimum bipartite matching where we try to move the sources minimally (with minimum perturbation in the chip floor plan) near cooler points (blocks) to obtain a uniform power profile due to diffusion of heat from hotter point to cooler ones.

Keywords :

3D chips, Hotspots ,Floorplaning ,Continuous domain, Integrated circuits, Power management ,Target point , Source point, Heat sink,Coarse mesh(CM),Fine mesh(FM), Effective thermal conductivity,etc 

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