Impact of Interface Fixed Charges on the Performance of the Channel Material Engineered Cylindrical Nanowire MOSFET
Rajni Gautam1, Manoj Saxena2, R.S.Gupta3 and Mridula Gupta1
1Semiconductor Device Research Laboratory, Department Of Electronic Science,University Of Delhi, India
2Department Of Electronics, Deen Dayal Upadhyaya college,University Of Delhi, India
3 Department Of Electronics and communication Engineering, Maharaja Agrasen Institute Of Technology, India
ABSTRACT
The paper presents a simulation study of effect of interface fixed charges on the performance of the cylindrical nanowire MOSFET for different channel materials (Si, GaAs and Ge). The objective of the present work is to study the effect of hot carrier damage/stress induced damage/process damage/radiation damage induced fixed charges at the semiconductor-oxide interface of the cylindrical nanowire MOSFET. Also the circuit reliability issues of the device are discussed in terms of the performance degradation due to interface fixed charges. The performance has been compared for the three materials in terms of drain current driving capability, Ion/Ioff ratio, early voltage, transconductance, parasitic gate capacitance, intrinsic delay, current gain and power gain of the device.
KEYWORDS
ATLAS-3D, channel length modulation, fixed Charges, hot carrier effect, interface traps, nanowire MOSFET.
Original Source Link : http://aircconline.com/vlsics/V2N3/2311vlsics19.pdf
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