CNFET BASED BASIC GATES AND A NOVEL FULLADDER CELL

CNFET BASED BASIC GATES AND A NOVEL FULLADDER CELL

Fazel Sharifi1, Amir Momeni1 and keivan Navi1

Department of Electrical and Computer Engineering, Shahid Beheshti University,Tehran, Iran

ABSTRACT

In this paper two novel high performance designs for AND and OR basic gates and a novel Full-Adder Cell are presented. These designs are based on carbon nanotube technology. In order to compare the proposed designs with previous ones both MOSFET based and CNFET based circuits are selected. By the way the proposed designs have better performance in comparison with previous designs in terms of speed, power consumption and power-delay product (PDP).

KEYWORDS

CNFET, MOSFET, Full-Adder cell, Basic gates.

Original Source Link : http://aircconline.com/vlsics/V3N3/3312vlsics02.pdf

http://airccse.org/journal/vlsi/vol3.html