A NOVEL FULL ADDER CELL BASED ON CARBON NANOTUBE FIELD EFFECT TRANSISTORS

A NOVEL FULL ADDER CELL BASED ON CARBON NANOTUBE FIELD EFFECT TRANSISTORS

Ali Ghorbani1 and Mehdi Sarkhosh1 and Elnaz Fayyazi 1 and Neda Mahmoudi 1 and Peiman Keshavarzian2

1Department of Computer Engineering, Science And Research Branch ,Islamic Azad University,Kerman,Iran

2Department of Computer Engineering, Kerman Branch ,Islamic Azad University,Kerman,Iran

ABSTRACT

Presenting a novel full adder cell will be increases all the arithmetic logic unit performance. In this paper, We present two new full adder cell designs using carbon nanotube field effect transistors (CNTFETs). In the first design we have 42 transistors and 5 pull-up resistance so that we have achieved an improvement in the output parameters. Simulations were carried out using HSPICE based on the CNTFET model with 0.9V VDD. The denouments results in that we have a considerable improvement in power, Delay and power delay product than the previous works.

KEYWORDS

Full Adder, Carbon Nano-tube, Carbon Nano-tube field effect transistor, Low power full adder, CNTFET

Original Source Link : http://aircconline.com/vlsics/V3N3/3312vlsics04.pdf

http://airccse.org/journal/vlsi/vol3.html