SCHOTTKY TUNNELING SOURCE IMPACT IONIZATION MOSFET (STS-IMOS) WITH ENHANCED DEVICE PERFORMANCE

Sangeeta Singh1 , Student Member, IEEE, P.N. Kondekar1 , Member, IEEE

1Nanoelectronics and VLSI Lab., Indian Institute of Information Technology, Design and Manufacturing (IIITDM), Jabalpur - 482005, India

ABSTRACT

In this paper, we propose and investigate a schottky tunneling source impact ionization MOSFET (STSIMOS) with enhanced device performance. STS-IMOS has silicide (NiSi) source to lower the breakdown voltage of conventional impact ionization MOS (IMOS). There is cumulative effect of both impact ionization and source induced tunneling for the current gating mechanism of the device. The silicide source offers immensely low parasitic resistance subsequently there is an increment in voltage drop across intrinsic region. This leads to appreciable lowering of breakdown and threshold voltage for STS-IMOS. Hence, it demonstrates enhanced device performance over conventional IMOS. Besides this for STS-IMOS the location of maximum electric field has shifted towards the source and now it is quite away from gate oxide. Hence, it shows high immunity against Vth fluctuations due to hot electron damage. Consequently, it is found that device reliability is also improved significantly.

KEYWORDS

Impact Ionization, Barrier Tunneling, Subthreshold Slope (SS), Schottky-Contacts

ORIGINAL SOURCE URL: http://aircconline.com/vlsics/V6N3/6315vlsi04.pdf